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Document Number: 89184 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 09-Feb-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
3
V60200PGW
Vishay General Semiconductor
New Product
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 5 - Typical Juncti
on Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Instantaneous
Forward Voltage (V)
0 0.2 0.6 1.00.4 0.8 1.2 1.4
100
10
1
0.1
TA
= 150 °C
TA
= 125 °C
TA
= 25 °C
In
s
tantaneou
s
Forward Current (A)
0.001
20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
In
s
tantaneou
s
Rever
s
e Current (mA)
TA
= 150 °C
TA
= 125 °C
TA
= 25 °C
0.01
0.1
1
10
100
10
1000
10 000
0.1 1 10 100
Reverse Voltage (V)
Junction Cap
acitance (p
F)
100
TJ
= 25 °C
f = 1.0 MHz
Vsig
= 50 mV
p-p
t - Pulse Duration (s)
Tran
s
ient Thermal Impedance (°C/W)
10
1
0.1
0.1 1 10 100
0.01
Junction to Ca
se
TO-3PW
0.645 (16.38)
0.625 (15.87)
0.323 (8.20)
0.313 (7.95)
0.245 (6.23)
0.225 (5.72)
0.840 (21.34)
0.820 (20.83)
0.170 (4.32)
? 0.146 (3.71)
? 0.136 (3.45)
0.090 (2.29)
0.080 (2.03)
0.131 (3.33)
0.121 (3.07)
0.048 (1.22)
0.044 (1.12)
0.225 (5.72)
0.205 (5.21)
0.565 (14.35)
0.545 (13.84)
0.160 (4.06)
0.140 (3.56)
0.551 (14.00)
0.537 (13.64)
0.077 (1.96)
0.063 (1.60)
0.079 (2.01)
0.065 (1.65)
0.467 (11.86)
0.453 (11.51)
5° Ref.
Both
Side
s
R0.155 (R3.94)
R0.145 (R3.68)
3° Ref.
30° Ref.
10° Typ.
Both
Side
s
3° Ref.
3° Ref.
0.050 (1.27)
0.175 (4.45)
0.165 (4.19)
0.030 (0.75)
0.020 (0.50)
0.098 (2.50)
0.083 (2.12)
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